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  creat by art - excellent clamping capability - low dynamic impedance - 600w surge capability at 10 / 1000 s waveform - typical i r less than 1 a above 10v - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 part no. with suffix "h" means aec-q101 qualified packing code with suffix "g" means green compound (halogen-free) terminal: pure tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test symbol p pk r jl t j t stg part no. part no. document number: ds_d1409028 version: i15 aec-q101 qualified green compound bzw06-20ha0g bzw06-20 h a0 g do-15 1,000 / bulk packing note 1: "xxx" defines voltage from 12.8v (bzw06-13) to 376v (bzw06-376) example preferred part no. part no. suffix packing code pacing code suffix description bzw06-xxx (note 1) h a0 g do-15 1,500 / ammo box r0 do-15 3,500 / 13" paper reel b0 do-204ac (do-15) mechanical data ordering information part no. suffix packing code pacing code suffix package packing bzw06 series taiwan semiconductor 600w, 13v - 376v transient volta g e su pp ressor features - fast response time: typically less than 1.0ps from 0 volt to v br for unidirectional and 5.0ns for bidirectional - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec case: do-204ac (do-15) weight: 0.4g (approximately) maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter value unit peak power dissipation at t a =25c, tp=1ms (note 1) 600 watts steady state power dissipation at t l =75c lead lengths .375", 9.5mm p d 1.7 watts - 55 to +175 c peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a 60 100 operating junction temperature range c/w note 1: non-repetitive current pulse, per fig. 3 junction to leads junction to ambient on printed circuit l lead=10mm r ja - 55 to +175 c storage temperature range
(t a =25c unless otherwise noted) document number: ds_d1409028 version: i15 bzw06 series taiwan semiconductor ratings and characteristics curves 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 200 peak pulse power(p pp ) or current (i pp ) a derating in percentage (%) t a , ambient temperature ( o c) fig.2 pulse derating curve 1 10 100 1000 0 1 10 100 1000 v cl , clamping voltage(v) ipp, peak pulse current(a) fig. 4 clamping voltage curve tp=20 s tp=1ms tp=10ms bwz06-376 bwz06-188 bwz06-58 bwz06-33 bwz06-19 bwz06-10 bwz06-5v8 0 20 40 60 80 100 120 140 00.511.522.533.54 peak pulse current (%) t, time ms fig. 3 clamping power pulse waveform td peak value i ppm tr=10 s half value-i ppm /2 10/1000 s, waveform as defined by r.e.a. pulse width(td) is defined as the point where the peak current decays to 50% of i ppm 10 100 1000 10000 100000 0.001 0.01 0.1 1 10 100 p ppm , peak pulse power, w tp, pulse width, (ms) fig. 1 peak pulse power rating curve non-repetitive pulse waveform shown in fig.3 10 100 1000 10000 1 10 100 1000 cj, junction capacitance (pf) a v( br ), breakdown voltage (v) fig. 5 typical junction capacitance f=1.0mhz vsig=50mvp-p bzw06-13 bzw06-58 bzw06-171
creat by art document number: ds_d1409028 version: i15 bzw06 series taiwan semiconductor 10 100 1000 10000 1 10 100 1000 cj, junction capacitance (pf) a v( br ), breakdown voltage (v) fig. 6 typical junction capacitance f=1.0mhz vsig=50mvp-p bzw06-13b bzw06-58b bzw06-171b 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 instantaneous forward current(a) forward voltage(v) fig.7 typical forward characteristics undirectional type 25 c 150 c 0.1 1 10 100 1000 10000 0 25 50 75 100 125 150 i r (t j ) / i r (t j =25 o c) t j ( o c) fig. 9 relative variation of leakage current vs junction temperature vr=vrm 1 10 100 0.01 0.1 1 10 100 1000 transient thermal impedance( o c/w) t, pulse duration (s) fig. 8 typical transient thermal characteristics
creat by art test stand-off reverse maximum current voltage leakage temperature @ v wm coefficient i t v wm i d vc i ppm vc i ppm v br ma v avava %/ o c unidirectional bidirectional min nom max max max max (note 2) bzw06-13 bzw06-13b 14.3 15 15.8 1 12.8 5 21.2 28.0 27.2 147 0.084 bzw06-15 bzw06-15b 17.1 18 18.9 1 15.3 1 25.2 24.0 32.5 123 0.088 bzw06-19 bzw06-19b 20.9 22 23.1 1 18.8 1 30.6 19.6 39.3 102 0.092 bzw06-20 bzw06-20b 22.8 24 25.2 1 20.5 1 33.2 28.0 42.8 93 0.094 bzw06-23 bzw06-23b 25.7 27 28.4 1 23.1 1 37.5 16.0 48.3 83 0.096 bzw06-26 bzw06-26b 28.5 30 31.5 1 25.6 1 41.5 14.5 53.5 75 0.097 bzw06-28 bzw06-28b 31.4 33 34.7 1 28.2 1 45.7 13.1 59.0 68 0.098 bzw06-31 bzw06-31b 34.2 36 37.8 1 30.8 1 49.9 12.0 64.3 62 0.099 bzw06-33 bzw06-33b 37.1 39 47.0 1 33.3 1 53.9 11.1 69.7 57 0.100 bzw06-37 bzw06-37b 40.9 43 45.2 1 36.8 1 59.3 10.1 75.0 52 0.101 bzw06-40 bzw06-40b 44.7 47 49.4 1 40.2 1 64.8 9.3 84.0 48 0.101 bzw06-48 bzw06-48b 53.2 56 58.8 1 47.8 1 77.0 7.8 100 40 0.103 bzw06-58 bzw06-58b 64.6 68 71.4 1 58.1 1 92.0 6.5 121 33 0.104 bzw06-70 bzw06-70b 77.9 82 86.1 1 70.1 1 113 5.3 146 27 0.105 bzw06-85 bzw06-85b 95 100 105 1 85.5 1 137 4.4 178 23 0.106 BZW06-102 BZW06-102b 114 120 126 1 102 1 165 3.6 212 19 0.107 bzw06-128 bzw06-128b 143 150 158 1 128 1 207 2.9 265 15 0.108 bzw06-154 bzw06-154b 171 180 189 1 154 1 246 2.4 317 13 0.108 bzw06-171 bzw06-171b 190 200 210 1 171 1 274 2.2 353 11 0.108 bzw06-188 bzw06-188b 209 220 231 1 188 1 301 2.0 388 10.3 0.108 bzw06-213 bzw06-213b 237 250 263 1 213 1 344 2.0 442 9.0 0.110 bzw06-256 bzw06-256b 285 300 315 1 256 1 414 1.6 529 7.6 0.110 bzw06-273 bzw06-273b 304 320.0 336 1 273 1 438 1.6 564 7.1 0.110 bzw06-299 bzw06-299b 332 350.0 368 1 299 1 482 1.6 618 6.5 0.110 bzw06-342 bzw06-342b 380 400 420 1 342 1 548 1.3 706 5.7 0.110 bzw06-376 bzw06-376b 418 440 462 1 376 1 603 1.3 776 5.7 0.110 notes: 1. pulse test tp<50ms 2. v br = t*(tamb - 25) * v br (25c) 3. v r =0v, f=1mhz, for bidirectional types, capacitance value is divided by 2. document number: ds_d1409028 version: i15 v br (note 1) device v voltage clamping voltage @i ppm (10/1000 s) bzw06 series taiwan semiconductor clamping voltage @i ppm (8/20 s) breakdown
creat by art min max min max a 2.60 3.60 0.102 0.142 b 0.70 0.90 0.028 0.035 c 25.40 - 1.000 - d 5.80 7.60 0.228 0.299 e 25.40 - 1.000 - p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1409028 version: i15 marking diagram bzw06 series taiwan semiconductor package outline dimensions do-204ac (do-15) dim. unit (mm) unit (inch)
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1409028 version: i15 bzw06 series taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,


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